july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors device symbol sma (do-214ac) package 25% smaller placement area than smb ion-implanted breakdown region precise and stable voltage smaj package (top view) rated for international surge wave shapes how to order device v drm v v (bo) v ?070 58 70 ?080 65 80 ?090 70 90 ?125 100 125 ?145 120 145 ?165 135 165 ?180 145 180 ?220 160 220 ?240 180 240 ?260 200 260 ?290 230 290 ?320 240 320 ?350 275 350 ?360 290 360 ?395 320 395 mdxxcce 12 r (b) t (a) t r sd4xaa t erminals t and r correspond to the alternative line designators of a and b wave shape standard i tsp a 2/10 s gr-1089-core 125 8/20 s iec 61000-4-5 100 10/160 s fcc part 68 65 10/700 s itu-t k.20/21/45 50 10/560 s fcc part 68 40 10/1000 s gr-1089-core 30 ............................................ ul recognized components *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier order as tisp 4xxxl3aj sma (do-214ac) embossed tape reel pack tisp4xxxl3ajr-s insert xxx value correspondin g to protection volta g es of 070, 080, 090, etc. *rohs compliant
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combi nations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. the tisp4xxxl3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 v to 320 v). they a re guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these protection device s are in an smaj (jedec do-214ac with j-bend leads) plastic package. these devices are supplied in embossed tape reel carrier pack. for alternat ive voltage and holding current values, consult the factory. for higher rated impulse currents, the 50 a 10/1000 tisp4xxxm3aj series in sma and the 100 a 10/1000 tisp4xxxh3bj series in smb are available. tisp4xxxl3aj overvoltage protector series description absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, (see note 1) ?4070 ?4080 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4260 ?4290 ?4350 ?4360 ?4395 v drm 58 65 ?4090 70 100 120 135 145 160 180 200 230 ?4320 240 275 290 320 v non-repetitive peak on-state pulse current (see notes 2, 3 and 4) i tsp a 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 125 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 100 10/160 s (fcc part 68, 10/160 s voltage wave shape) 65 5/310 s (itu-t k.20/21/45, k.44 10/700 s voltage wave shape) 50 5/310 s (ftz r12, 10/700 s voltage wave shape) 50 10/560 s (fcc part 68, 10/560 s voltage wave shape) 40 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) 30 non-repetitive peak on-state current (see notes 2, 3 and 4) i tsm 18 7 1.6 a 20 ms (50 hz) full sine wave 1 s (50 hz) full sine wave 1000 s 50 hz/60 hz a.c. junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. for voltage values at lower temperatures, derate at 0.13 %/ c. 2. initially, the tisp4xxxl3 must be in thermal equilibrium with t j =25 c. 3. the surge may be repeated after the tisp4xxxl3 returns to its initial conditions. 4. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. derate current values at -0.61 %/ c for ambient temperatures above 25 c.
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series recommended operating conditions electrical characteristics, t a = 25 c (unless otherwise noted) component min typ max unit r s series resistor for fcc part 68, 10/560 type a surge survival 12 ? series resistor for fcc part 68, 9/720 type b surge survival 0 ? series resistor for gr-1089-core first-level and second-level surge survival 23 ? series resistor for k.20, k.21 and k.45 1.5 kv, 10/700 surge survival 0 ? series resistor for k.20, k.21 and k.45 coordination with a 400 v primary protector 7 ? parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source = 300 ? ?070 ?080 ?090 ?125 ?145 ?165 ?180 ?220 ?240 ?260 ?290 ?320 ?350 ?360 ?395 70 80 90 125 145 165 180 220 240 260 290 320 350 360 395 v i (bo) breakover current dv/dt = 250 v/ms, r source = 300 ? 0.8 a i h holding current i t = 5 a, di/dt = +/-30 ma/ms 0.15 0.60 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/ s i d off-state current ?070, v d = 52 v ?080, v d = 59 v ?090, v d = 63 v ?125, v d = 90 v ?145, v d = 108 v ?165, v d = 122 v ?180, v d = 131 v ?220, v d = 144 v ?240, v d = 162 v ?260, v d = 180 v ?290, v d = 207 v ?320, v d = 216 v ?350, v d = 248 v ?360, v d = 261 v ?395, v d = 288 v 2 a i d off-state current d = 50 v v 10 a
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal characteristics tisp4xxxl3aj overvoltage protector series electrical characteristics, t a = 25 c (unless otherwise noted) (continued) c off off-state capacitance f=1mhz, v d =1v rms, v d = 1v f=1mhz, v d =1v rms, v d = 50 v 4070 thru 4090 4125 thru 4220 4240 thru 4395 4070 thru 4090 4125 thru 4220 4240 thru 4395 53 40 33 25 18 14 64 48 40 30 22 17 pf parameter test conditions min typ max unit parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 75) 115 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 52 note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series parameter measurement information figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i i switching characteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaab v drm i drm
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series typical characteristics figure 2. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0?01 0?1 0? 1 10 tc4lag v d = 50 v figure 3. t j - junction temperature - c normalized breakover voltage vs junction temperature -25 0 25 50 75 100 125 150 normalized breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4laf figure 4. on-state current - a on-state current vs on-state voltage v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 10 1 i t - 0.5 0.7 1.5 2 3 4 5 7 15 20 30 40 50 1 10 t a = 25 c t w = 100 s tc4mam '4070 thru '4090 '4125 thru '4220 '4240 thru '4395 figure 5. junction temperature - c t j - -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4lad normalized holding current vs junction temperature
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series typical characteristics figure 6. normalized capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 tc4labc '4070 thru '4090 '4240 thru '4395 '4125 thru '4220 t j = 25 c v d = 1 vrms figure 7. differential off-state capacitance vs rated repetitive peak off-state voltage v drm - repetitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 350 100 ? c - differential off-state capacitance - pf 10 15 20 25 30 ? c = c off(-2 v) - c off(-50 v) tclaeb typical capacitance asymmetry vs off-state voltage figure 6. off-state voltage - v v d ? 23 1 1 4 5 7 20 30 40 50 0 |c off(+vd) - c off(-vd) | capacitance asymmetry ?pf 0 1 v d = 1 v rm s, 1 mhz v d = 10 mv rms, 1 mhz tc4lbb
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxl3aj overvoltage protector series rating and thermal information figure 9. non-repetitive peak on-state current vs current duration t - current duration - s 0.01 0.1 1 10 100 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 10 ti4lai v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c figure 10. v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4ladb '4070 thru '4090 '4125 thru '4220 '4240 thru '4395
july 2000 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. mechanical data tisp4xxxl3aj overvoltage protector series recommended printed wiring land pattern dimensions device symbolization code devices will be coded as below. as the device parameters are symmetrical, terminal 1 is not identified. carrier information for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or em bossed tape. sma land pattern mdxx bic 2.34 (. 092) 1.90 (.075) 2.16 (.085) dimensions are: millimeters (inches) device symbolization code tisp4070l3 4070l tisp4080l3 4080l tisp4090l3 4090l tisp4125l3 4125l tisp4145l3 4145l tisp4165l3 4165l tisp4180l3 4180l tisp4220l3 4220l tisp4240l3 4240l tisp4260l3 4260l tisp4290l3 4290l tisp4320l3 4320l tisp4350l3 4350l tisp4360l3 4360l tisp4395l3 4395l carrier standard quantity embossed tape reel pack 5,000 ?isp?is a trademark of bourns, ltd., a bourns company and registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.
|
